Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3% PAE in 0.13 μm SiGe BiCMOS

Justin Romstadt, Vincent Lammert, Nils Pohl, Vadim Issakov

in Proc. 2020 IEEE To­pi­cal Mee­ting on Si­li­con Mo­no­li­th­hic In­te­gra­ted Cir­cuits in RF Sys­tems (SiRF), San Antonio, USA, Jan. 26-29, 2020

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